February 2008 Rev 1 1/11
11
2STR1160
Low voltage fast-switching NPN power transistor
Features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Miniature SOT-23 plastic package for surface
mounting circuits
Description
The device in a NPN transistor manufactured
using new “PB-HCD” (Power Bipolar High Current
Density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
The complementary PNP is the 2STR2160.
Applications
■ LED
■ Battery charger
■ Motor and relay driver
■ Voltage regulation
Figure 1. Internal schematic diagram
SOT-23
Table 1. Device summary
Order code Marking Package Packing
2STR1160 160 SOT-23 Tape and reel
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