July 2008 Rev 3 1/9
9
Features
■ High breakdown voltage V
CEO
= 230 V
■ Complementary to 2STA1962
■ Fast-switching speed
■ Typical f
T
= 30 MHz
Application
■ Audio power amplifier
Description
This device is a NPN transistor manufactured
using new BiT-LA (Bipolar Transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Figure 1. Internal schematic diagram
Table 1. Device summary
1
2
3
TO-3P
Order code Marking Package Packaging
2STC5242 2STC5242 TO-3P Tube
2STC5242
High power NPN epitaxial planar bipolar transistor
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