April 2008 Rev 2 1/7
7
2STC4467
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage V
CEO
= 120 V
■ Complementary to 2STA1694
■ Fast-switching speed
■ Typical f
t
= 20 MHz
■ Fully characterized at 125
o
C
Applications
■ Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Table 1. Device summary
Figure 1. Internal schematic diagram
TO-3P
1
2
3
Order code Marking Package Packaging
2STC4467 2STC4467 TO-3P Tube
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