Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
May 2008 Rev 2 1/8
8
2STA2120
High power PNP epitaxial planar bipolar transistor
Features
■ High breakdown voltage V
CEO
= 250 V
■ Complementary to 2STC5948
■ Fast-switching speed
■ Typical f
t
= 25 MHz
■ Fully characterized at 125
o
C
Applications
■ Audio power amplifier
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Table 1. Device summary
Figure 1. Internal schematic diagram
TO-3P
1
2
3
Order code Marking Package Packaging
2STA2120 2STA2120 TO-3P Tube
ww w.st.com