1/6February 2005
n HIGH VOLTAGE SPECIAL DARLINGTON
STRUCTURE
n VERY RUGGED BIPOLAR TECHNOLOGY
n HIGH OPERATION JUNCTION
TEMPERATURE
n HIGH DC CURRENT GAIN
APPLICATIONS
n DRIVER FOR SOLENOID, RELAY AND
MOTOR
DESCRIPTION
The 2ST501T is a High Voltage NPN silicon
transistor in monolithic special Darlington
configuration mounted in Jedec TO-220 plastic
package.
Figure 1: Package
Figure 2: Internal Schematic Diagram
Table 1: Order Codes
Table 2: Absolute Maximum Ratings
TO-220
2
Part Number Marking Package Packaging
2ST501T 2ST501T TO-220 TUBE
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
500 V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
350 V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5V
I
C
Collector Current
4A
I
CM
Collector Peak Current (t
p
< 5ms)
8A
I
B
Base Current
0.5 A
I
BM
Base Peak Current (t
p
< 5ms)
2.5 A
P
tot
Total Dissipation at T
C
= 25
o
C
100 W
T
stg
Storage Temperature
-65 to 150 °C
T
J
Max. Operating Junction Temperature
150 °C
2ST501T
HIGH VOLTAGE NPN POWER TRANSISTOR
Rev. 1
