December 2009 Doc ID 16856 Rev 1 1/7
7
2ST1480FP
Low voltage NPN power transistor
Features
■ High current gain characteristic
■ Fast switching speed
■ Fully insulated package
Applications
■ Printer
■ DC-DC converter
Description
The device is manufactured using new “PB-HCD”
(power bipolar high current density) technology.
The resulting transistor shows exceptional high
gain performances coupled with very low
saturation voltage.
Figure 1. Internal schematic diagrams
TO-220FP
1
2
Table 1. Device summary
Order code Marking Package Packaging
2ST1480FP 2ST1480FP TO-220FP Tube
www.st.com
Obsolete Product(s) - Obsolete Product(s)
