MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2478 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS (on) = 7.5 Ω (VGS = 10 V, ID = 1.0 A)
• Low Ciss Ciss = 485 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 900 V
Gate to Source Voltage V
GSS ± 30 V
Drain Current (DC) ID(DC) ± 2.0 A
Drain Current (pulse)* ID(pulse) ± 8.0 A
Total Power Dissipation (Tc = 25 ˚C) PT1 30 W
Total Power Dissipation (T
A = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
AS 2.0 A
Single Avalanche Energy** EAS 16.5 mJ
* PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2478
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10270EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
10.0±0.3 4.5±0.2
3.2±0.2
2.7±0.2
2.5±0.11.3±0.2
1.5±0.2
2.54
0.7±0.1
2.54
0.65±0.1
123
3±0.14±0.2
15.0±0.3
12.0±0.213.5MIN.
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Body
Diode
Source
Drain
Gate
©
1995
DATA SHEET