MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2477 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A)
• Low Ciss Ciss = 2 950 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 800 V
Gate to Source Voltage VGSS ± 30 V
Drain Current (DC) I
D (DC) ± 10 A
Drain Current (pulse)* ID (pulse) ± 30 A
Total Power Dissipation (Tc = 25 ˚C) PT1 150 W
Total Power Dissipation (TA = 25 ˚C) PT2 3.0 W
Channel Temperature T
ch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 10 A
Single Avalanche Energy** E
AS 300 mJ
* PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2477
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10269EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
©
1995
DATA SHEET
Body
Diode
Source
Drain
Gate
MP-88
1.0±0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
4
15.7 MAX.
3.2±0.2
2.8±0.10.6±0.12.2±0.2
5.45 5.45
4.7 MAX.
1.5
1.06.0
7.0
19 MIN. 20.0±0.2
3.0±0.2
4.5±0.2
