©
1994
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2414 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A)
R
DS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
• Low Ciss Ciss = 840 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) I
D(DC) ±10 A
Drain Current (pulse)* ID(pulse) ±40 A
Total Power Dissipation (Tc = 25 ˚C) PT1 20 W
Total Power Dissipation (T
A = 25 ˚C) PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current** I
AS 10 A
Single Avalanche Energy** EAS 10 mJ
* PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2414, 2SK2414-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
Document No. D13193EJ2V0DS00 (2nd edition)
(Previous No. TC-2495)
Date Published March 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
MP-3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2
0.5 ±0.1
0.6 ±0.1
0.6 ±0.1
1.3
MAX.
1.6 ±0.2
123
5.5 ±0.2
7.0
MIN.
13.7
MIN.
2.3 2.3
0.75
4
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2
0.5 ±0.1
4.3
MAX.
1.3
MAX.
2.3 2.3
12 3
4
5.5 ±0.2
10.0 MAX.
1.5
+0.2
–0.1
1.5
+0.2
–0.1
0.9
MAX.
0.8
MAX.
0.8
0.5
0.8
12.0
MIN.
1.0
MIN.
1.5
TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-3Z (SURFACE MOUNT TYPE)
Drain
Gate
Source
Body
Diode
Gate Protection
Diode
