MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2412 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 10 A)
R
DS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 10 A)
• Low Ciss Ciss = 860 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ± 20 V
Drain Current (DC) I
D(DC) ± 20 A
Drain Current (pulse)* ID(pulse) ± 80 A
Total Power Dissipation (Tc = 25 ˚C) PT1 30 W
Total Power Dissipation (T
A = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
AS 20 A
Single Avalanche Energy** EAS 22.5 mJ
* PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2412
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
©
1994
DATA SHEET
Document No. TC-2493
(O. D. No. TC-8031)
Date Published November 1994 P
Printed in Japan
Drain
Source
Body
Diode
Gate
Gate Protection
Diode
MP-45F(ISOLATED TO-220)
10.0 ±0.3
3.2 ±0.2
4.5 ±0.2
2.7 ±0.2
15.0 ±0.3
3 ±0.1
12.0 ±0.2
13.5
MIN.
4 ±0.2
1.3 ±0.2
1.5 ±0.2
2.542.54
0.7 ±0.1
0.65 ±0.1
2.5 ±0.1
123
1. Gate
2. Drain
3. Source
PACKAGE DIMENSIONS
(in millimeters)