MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
DESCRIPTION
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A)
2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A)
• Low C
iss Ciss = 3600 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
(2SK2371/2SK2372)
VDSS 450/500 V
Gate to Source Voltage VGSS ± 30 V
Drain Current (DC) I
D(DC) ± 25 A
Drain Current (pulse)* ID(pulse) ± 100 A
Total Power Dissipation (TC = 25 °C) PT1 160 W
Total Power Dissipation (T
a = 25 °C) PT2 3.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 ~ +150 °C
Single Avalanche Current** I
AS 25 A
Single Avalanche Energy** EAS 446 mJ
* PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
©
1995
DATA SHEET
Document No. TC-2505
(O.D. No. TC-8064
Date Published January 1995 P
Printed in Japan
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Body
Diode
Source
Drain
Gate
3
3.2 ± 0.2
4.7 MAX.
1.5
7.0
2.8 ± 0.10.6 ± 0.1
1.0 ± 0.2
2.2 ± 0.2
5.45 5.45
15.7 MAX.
4
12
4.5 ± 0.2
20.0 ± 0.2
3.0 ± 0.2
6.0 1.0
19 MIN.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
PACKAGE DIMENSIONS
(in millimeters)
