MOS FIELD EFFECT TRANSISTORS
DESCRIPTION
The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2369: RDS(on) = 0.35 Ω (VGS = 10 V, ID = 10 A)
2SK2370: R
DS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A)
• Low Ciss Ciss = 2400 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage(2SAK2369/2370) VDSS 450/500 V
Gate to Source Voltage V
GSS ± 30 V
Drain Current (DC) ID(DC) ± 20 A
Drain Current (pulse)* ID(pulse) ± 80 A
Total Power Dissipation (Tc = 25 ˚C) PT1 140 W
Total Power Dissipation (T
A = 25 ˚C) PT2 3.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
AS 20 A
Single Avalanche Energy** EAS 285 mJ
* PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2369/2SK2370
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
3
φ
4.7 MAX.
1.5
7.0
2.8 ± 0.10.6 ± 0.1
1.0 ± 0.2
2.2 ± 0.2
5.45 5.45
15.7 MAX
4
12
4.5 ± 0.2
20.0 ± 0.2
3.0 ± 0.2
6.0 1.0
19 MIN.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
3.0 ± 0.2
MP-88
Body
Diode
Source
Drain
Gate
Document No. TC-2507
(O. D. No. TC-8066)
Date Published January 1995 P
Printed in Japan
©
1995
DATA SHEET
