MOS FIELD EFFECT TRANSISTORS
DESCRIPTION
The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2367: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 8.0 A)
2SK2368: R
DS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A)
• Low Ciss Ciss = 1 600 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2367/2SK2368)
VDSS 450/500 V
Gate to Source Voltage V
GSS ± 30 V
Drain Current (DC) ID (DC) ± 15 A
Drain Current (pulse)* ID (pulse) ± 60 A
Total Power Dissipation (T
c = 25 ˚C) PT1 120 W
Total Power Dissipation (TA = 25 ˚C) PT2 3.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature T
stg –55 to +150 ˚C
Single Avalanche Current** IAS 15 A
Single Avalanche Energy** EAS 161 mJ
* PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2367/2SK2368
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. TC-2506
(O. D. No. TC-8065)
Date Published December 1994 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1.0±0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
4
15.7 MAX.
3.2±0.2
2.8±0.10.6±0.12.2±0.2
5.45 5.45
4.7 MAX.
1.5
1.06.0
7.0
19 MIN. 20.0±0.2
3.0±0.2
4.5±0.2
©
1995
DATA SHEET
1994