MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 4.0 A)
2SK2364: R
DS (on) = 0.6 Ω (VGS = 10 V, ID = 4.0 A)
• Low Ciss Ciss = 1600 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2363/2SK2364)
VDSS 450/500 V
Gate to Source Voltage VGSS ± 30 V
Drain Current (DC) ID(DC) ± 8.0 A
Drain Current (pulse)* ID(pulse) ± 32 A
Total Power Dissipation (T
c = 25 ˚C) PT1 35 W
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature T
stg –55 to +150 ˚C
Single Avalanche Current** IAS 8.0 A
Single Avalanche Energy** EAS 320 mJ
* PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2363/2SK2364
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
©
1994
DATA SHEET
Document No. TC-2504A
(O. D. No. TC-8063A)
Date Published May 1995 P
Printed in Japan
10.0±0.3 4.5±0.2
3.2±0.2
2.7±0.2
2.5±0.11.3±0.2
1.5±0.2
2.54
0.7±0.1
2.54
0.65±0.1
123
3±0.14±0.2
15.0±0.3
12.0±0.213.5MIN.
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Body
Diode
Source
Drain
Gate
PACKAGE DIMENSIONS
(in millimeter)