©
1994
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel
MOS Field Effect Transistor designed for high voltage switching
applications.
FEATURES
• Low On-Resistance
2SK2355: R
DS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)
2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 670 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2355/2356) VDSS 450/500 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±5.0 A
Drain Current (pulse)* I
D(pulse) ±20 A
Total Power Dissipation (Tc = 25 ˚C) PT1 50 W
Total Power Dissipation (Ta = 25 ˚C) PT2 1.5 W
Channel Temperature T
ch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current** IAS 5.0 A
Single Avalanche Energy** E
AS 17.4 mJ
* PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
Document No. D11391EJ3V0DS00 (3rd edition)
(Previous No. TC-2500)
Date Published March 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
10.6 MAX.
10.0
3.0 ±0.3
3.6 ±0.2
5.9 MIN.
15.5 MAX.
6.0 MAX.
12.7 MIN.
1.3 ±0.2
0.75 ±0.1
2.542.54
4.8 MAX.
1.3 ±0.2
0.5 ±0.2
2.8 ±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
(10.0)
4.8 MAX.
MP-25 (TO-220)
1.3 ±0.2
0.5 ±0.2
(0.5R)
(0.8R)
4
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
123
(2.54)(2.54)
1.4 ±0.2
8.5 ±0.2
1.1 ±0.2
3.0 ±0.5
2.8 ±0.2
1.5 MAX.
1.0 ±0.5
4
Drain
Body
Diode
Gate
Source
MP-25Z (TO-220 SURFACE MOUNT TYPE)
1.0 ±0.3