MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)
2SK2354: R
DS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 670 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2353/2354) VDSS 450/500 V
Gate to Source Voltage VGSS ± 30 V
Drain Current (DC) I
D(DC) ± 4.5 A
Drain Current (pulse)* ID(pulse) ± 18 A
Total Power Dissipation (Tc = 25 ˚C) PT1 30 W
Total Power Dissipation (T
a = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
AS 4.5 A
Single Avalanche Energy** EAS 17.4 mJ
* PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2353/2SK2354
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
©
1994
DATA SHEET
Document No. TC-2499
(O. D. No. TC-8047)
Date Published November 1994 P
Printed in Japan
10.0 ±0.3.
0.7 ±0.1
2.7 ±0.2
4.5 ±0.2
15.0 ±0.3
3.2 ±0.2
2.5 ±0.1
0.65 ±0.1
1.3 ±0.2
1.5 ±0.2
2.542.54
3 ±0.1
12.0 ±0.213.5 MIN.
4 ±0.2
1. Gate
2. Drain
3. Source
Drain
Body
Diode
Gate
Source
123
PACKAGE DIMENSIONS
(in millimeters)
MP-45F (ISOLATED TO-220)