©
1995
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2275
DESCRIPTION
The 2SK2275 is N-channel Power MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
•
Low On-state Resistance
RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A)
•
LOW Ciss Ciss = 1 000 pF TYP.
•
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS 900 V
Gate to Source Voltage VGSS ± 30 V
Drain Current (DC) ID (DC) ± 3.5 A
Drain Current (pulse) I
D (pulse)* ± 14 A
Total Power Dissipation (TC = 25 °C) PT1 35 W
Total Power Dissipation (Ta = 25 °C) PT2 2.0 W
Storage Temperature T
stg –55 to +150 °C
Channel Temperature Tch 150 °C
Single Avalanche Current IAS** 3.5 A
Single Avalanche Energy E
AS** 22 mJ
*PW ≤ 10
µ
s, Duty Cycle ≤ 1%
**Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. TC-2510
(O.D. No. TC–8069)
Date Published February 1995 P
Printed in Japan
10.0 ± 0.3
φ3.2 ± 0.2
4.5 ± 0.2
2.7 ± 0.2
2.5 ± 0.1
0.65 ± 0.1
1.5 ± 0.2
2.54 TYP.
1.3 ± 0.2
2.54 TYP.
0.7 ± 0.1
4 ± 0.2
15.0 ± 0.3
12.0 ± 0.2
3 ± 0.1
123
1. Gate
2. Drain
3. Source
13.5 MIN.
Body diode
Source (S)
Drain (D)
Gate (G)
123
PACKAGE DIMENSIONS
(in millimeters)
MP-45F (ISOLATED TO-220)
