©
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1958
The 2SK1958 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
• Gate can be driven by 1.5 V
• Because of its high input impedance, there’s no need to
consider drive current
• Since bias resistance can be omitted, the number of
components required can be reduced
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 16 V
Gate to Source Voltage VGSS VDS = 0 ± 7.0 V
Drain Current (DC) ID(DC) ± 0.1 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, duty cycle ≤ 50 % ± 0.2 A
Total Power Dissipation PT 150 mW
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Document No. D11221EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
Marking: G21
1.25 ±0.1
2.1 ±0.1
D
0.3
+0.1
–0
0.3
+0.1
–0
G
S
2.0 ±0.2
0.650.65
0.15
+0.1
–0.05
0 to 0.1
0.3
0.9 ±0.1
Marking
EQUIVALENT CURCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Source
Drain
Gate
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
