1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1824
N-CHANNEL MOS FET
FOR SWITCHING
Document No. D11220EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
0.3 ± 0.05
1.6 ± 0.1
0.8 ± 0.1
G
0.2
+0.1
–0
0.5 0.5
1.0
1.6 ± 0.1
D
S
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
–0.05
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: B1
The 2SK1824 is a N-channel vertical type MOS FET that is
driven at 2.5 V.
Because this MOS FET can be driven on a low voltage and
because it is not necessary to consider the drive current, the
2SK1824 is ideal for driving the actuator of power-saving systems,
such as VCR cameras and headphone stereo systems.
Moreover, the 2SK1824 is housed in a super small mini-mold
package so that it can help increase the mounting density on the
printed circuit board and lower the mounting cost, contributing to
miniaturization of the application systems.
FEATURES
• Small mounting area: about 60 % of the conventional mini-mold
package (SC-70)
• Can be automatically mounted
• Can be directly driven by 3-V IC
The internal diode in the right figure is a parasitic diode.
The protection diode is to protect the product from damage
due to static electricity. If there is a danger that an extremely
high voltage will be applied across the gate and source in the
actual circuit, a gate protection circuit such as an external
constant-voltage diode is necessary.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 30 V
Gate to Source Voltage VGSS VDS = 0 ±7V
Drain Current (DC) ID(DC) ± 100 mA
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms ± 200 mA
Duty cycle ≤ 50 %
Total Power Dissipation PT
3.0 cm
2
× 0.64 mm, ceramic substrate used
200 mW
Channel Temperature Tch 150 ˚C
Operating Temperature Topt –55 to +80 ˚C
Storage Temperature Tstg –55 to +150 ˚C
