The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
MOS FIELD EFFECT TRANSISTOR
2SJ626
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D15962EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
2002
DESCRIPTION
The 2SJ626 is a switching device which can be driven directly
by a 4.0 V power source.
The 2SJ626 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 4.0 V drive available
• Low on-state resistance
R
DS(on)1
= 388 mΩ MAX. (V
GS
= –10 V, I
D
= –1.0 A)
R
DS(on)2
= 514 mΩ MAX. (V
GS
= –4.5 V, I
D
= –1.0 A)
R
DS(on)3
= 556 mΩ MAX. (V
GS
= –4.0 V, I
D
= –1.0 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ626 SC-96 (Mini Mold Thin Type)
Marking: XN
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V) V
DSS
–60 V
Gate to Source Voltage (VDS
= 0 V) V
GSS
m20
V
Drain Current (DC) (T
A
= 25°C) I
D(DC)
m1.5
A
Drain Current (pulse)
Note1
I
D(pulse)
m6.0
A
Total Power Dissipation P
T1
0.2 W
Total Power Dissipation
Note2
P
T2
1.25 W
Channel Temperature Tch
150 °C
Storage Temperature Tstg
–55 to +150 °C
Notes 1. PW ≤ 10
µ
s, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5
sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
0.4
+0.1
–0.05
2.8 ±0.2
1.5
0.95
1
2
3
1.9
2.9 ±0.2
0.95
0.65
+0.1
–0.15
1
: Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain