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MOS FIELD EFFECT TRANSISTOR
2SJ621
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D15634EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
2001
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SJ621 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 1.8 V drive available
• Low on-state resistance
R
DS(on)1
= 44 mΩ MAX. ( V
GS
= –4.5 V, I
D
= –2.0 A)
RDS(on)2
= 56 mΩ MAX. ( V
GS
= –3.0 V, I
D
= –2.0 A)
RDS(on)3
= 62 mΩ MAX. ( V
GS
= –2.5 V, I
D
= –2.0 A)
RDS(on)4
= 105 mΩ MAX. (V
GS
= –1.8 V, I
D
= –1.5 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ621 SC-96 (Mini Mold Thin Type)
Marking: XG
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V) V
DSS
–12 V
Gate to Source Voltage (V
DS
= 0 V) V
GSS
m8.0
V
Drain Current (DC) (TA
= 25°C) I
D(DC)
m3.5
A
Drain Current (pulse)
Note1
I
D(pulse)
m12
A
Total Power Dissipation (TA
= 25°C) P
T1
0.2 W
Total Power Dissipation (T
A
= 25°C)
Note2
P
T2
1.25 W
Channel Temperature T
ch
150 °C
Storage Temperature T
stg
–55 to +150 °C
Notes 1. PW ≤ 10
µ
s, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5
sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
0.4
+0.1
–0.05
2.8 ±0.2
1.5
0.95
1
2
3
1.9
2.9 ±0.2
0.95
0.65
+0.1
–0.15
1
: Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
