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MOS FIELD EFFECT TRANSISTOR
2SJ606
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14654EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
2000, 2001
DESCRIPTION
The 2SJ606 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1
= 15 mΩ MA X. (V
GS
= −10 V, I
D
= −42 A)
R
DS(on)2
= 23 mΩ MA X. (V
GS
= −4.0 V, I
D
= −42 A)
• Low input capacitance:
C
iss
= 4800 pF TYP. (V
DS
= −10
V, V
GS
= 0
V)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V) V
DSS −60 V
Gate to Source Voltage (V
DS
= 0 V) V
GSS
m
20
V
Drain Current (DC) (T
C
= 25°C) I
D(DC)
m
83
A
Drain Current (pulse)
Note1
I
D(pulse)
m
300
A
Total Power Dissipation (T
C
= 25°C) P
T
120 W
Total Power Dissipation (TA
= 25°C) P
T
1.5 W
Channel Temperature Tch
150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current
Note2
I
AS −40 A
Single Avalanche Energy
Note2
E
AS
160 mJ
Notes 1. PW ≤ 10
µ
s, Duty cycle ≤ 1%
2. Starting T
ch
= 25°C, V
DD
= −30 V, R
G
= 25 Ω, V
GS
= −20 → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ606 TO-220AB
2SJ606-S TO-262
2SJ606-ZJ TO-263
2SJ606-Z
TO-220SMD
Note
Note
TO-220SMD package is produced only in
Japan
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
