©
2000
MOS FIELD EFFECT TRANSISTOR
2SJ605
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14650EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mar k
!
!!
!
shows major revised points.
DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
• Super low on-state resistance:
R
DS(on)1
= 20 mΩ MAX. ( V
GS
= –10
V, I
D
= –33
A)
RDS(on)2
= 31 mΩ MAX. ( V
GS
= –4.0
V, I
D
= –33 A)
• Low input capacitance
C
iss
= 4600 pF TYP. (V
DS
= –10
V, V
GS
= 0 A)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATI NGS (T
A
= 25°C)
Drain to Source Voltage (VGS = 0 V) V
DSS
–60 V
Gate to Source Voltage (V
DS = 0 V) V
GSS
m
20
V
Drain Current (DC) (T
C
= 25°C) I
D(DC)
m
65
A
Drain Current (pulse)
Note1
I
D(pulse)
m
200
A
Total Power Dissipation (T
C
= 25°C) P
T
100 W
Total Power Dissipation
(T
A
= 25°C) P
T
1.5 W
Channel Temperature Tch
150 °C
Storage Temperature Tstg
–55 to +150 °C
Single Avalanche Current
Note2
I
AS
–45 A
Single Avalanche Energy
Note2
E
AS
203 mJ
Notes 1.
PW ≤ 10
µ
s, Duty cycle ≤ 1%
2. Starting T
ch
= 25°C, V
DD
= –30 V, R
G
= 25 Ω, V
GS
= –20
→
0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ605 TO-220AB
2SJ605-S TO-262
2SJ605-ZJ TO-263
2SJ605-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
!
!
