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©
2000
MOS FIELD EFFECT TRANSISTOR
2SJ601
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY DATA SHEET
Document No. D14646EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SJ601 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance:
R
DS(on)1
= 31 mΩ MAX. (V
GS
= –10
V, I
D
= –18
A)
RDS(on)2
= 46 mΩ MAX. (V
GS
= –4.0
V, I
D
= –18 A)
• Low Ciss
: C
iss
= 3300 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V) V
DSS
–60 V
Gate to Source Voltage (VGS
= 0 V) V
GSS
m
20
V
Drain Current (DC) (T
C
= 25°C) I
D(DC)
m
36
A
Drain Current (pulse)
Note1
I
D(pulse)
m
120
A
Total Power Dissipation (T
C
= 25°C) P
T
65 W
Total Power Dissipation
(T
A
= 25°C) P
T
1.0 W
Channel Temperature Tch
150 °C
Storage Temperature Tstg
–55 to +150 °C
Single Avalanche Current
Note2
I
AS
–35 A
Single Avalanche Energy
Note2
E
AS
123 mJ
Notes 1. PW ≤ 10
µ
s, Duty cycle ≤ 1%
2.
Starting T
ch
= 25°C, R
G
= 25 Ω, V
GS
= –20 V → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ601 TO-251
2SJ601-Z TO-252
(TO-251)
(TO-252)