©
2000
MOS FIELD EFFECT TRANSISTOR
2SJ599
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY DATA SHEET
Document No. D14644EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SJ599 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance:
RDS(on)1
= 75 mΩ MAX. ( V
GS
= –10
V, I
D
= –10
A)
R
DS(on)2
= 111 mΩ MAX. ( V
GS
= –4.0
V, I
D
= –10 A)
• Low C
iss
: C
iss
= 1300 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATI NGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0
V) V
DSS
–60 V
Gate to Source Voltage (VDS
= 0
V) V
GSS
+
20
V
Drain Current (DC) (T
C
= 25°C) I
D(DC)
+
20
A
Drain Current (pulse)
Note1
I
D(pulse)
+
50
A
Total Power Dissipation (T
C
= 25°C) P
T
35 W
Total Power Dissipation
(T
A
= 25°C) P
T
1.0 W
Channel Temperature Tch
150 °C
Storage Temperature Tstg
–55 to +150 °C
Single Avalanche Current
Note2
I
AS
–20 A
Single Avalanche Energy
Note2
E
AS
40 mJ
Notes 1. PW ≤ 10
µ
s, Duty cycle ≤ 1%
2. Starting T
ch
= 25°C, R
G
= 25 Ω, V
GS
= –20 V → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ599 TO-251
2SJ599-Z TO-252
(TO-251)
(TO-252)
