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©
1998, 1999
MOS FIELD EFFECT TRANSISTOR
2SJ557
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D13292EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SJ557 is a switching device which can be driven directly
by a 4
V power source.
The 2SJ557 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• Can be driven by a 4
V power source
• Low on-state resistance
R
DS(on)1
= 155 mΩ MAX. (V
GS
= –10
V, I
D
= –1.0
A)
R
DS(on)2
= 255 mΩ MAX. (V
GS
= –4.5
V, I
D
= –1.0 A)
R
DS(on)3
= 290 mΩ MAX. (V
GS
= –4.0
V, I
D
= –1.0 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ557 3-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage V
DSS
–30 V
Gate to Source Voltage V
GSS
–20 / +5 V
Drain Current (DC) I
D(DC)
±2.5 A
Drain Current (pulse)
Note1
I
D(pulse)
±10 A
Total Power Dissipation P
T1
0.2 W
Total Power Dissipation
Note2
P
T2
1.25 W
Channel Temperature T
ch
150 °C
Storage Temperature T
stg
–55 to +150 °C
Notes 1.
PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
2.
Mounted on FR4 Board, t ≤ 5
sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
2.8 ±0.2
1.5
0.95
1
2
3
1.9
2.9 ±0.2
0.4
+0.1
–0.05
0.95
0.65
+0.1
–0.15
1
: Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: XB
Gate
Drain