MOS FIELD EFFECT POWER TRANSISTORS
2SJ494
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
1998©
Document No. D11266EJ2V0DS00 (2nd edition)
Date Published January 1998 N CP(K)
Printed in Japan
DATA SHEET
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super Low On-State Resistance
R
DS(on)1
= 50 m
:
Max. (V
GS
= –10 V, I
D
= –10 A)
R
DS(on)2
= 88 m
:
Max. (V
GS
= –4 V, I
D
= –10 A)
• Low C
iss
C
iss
= 2360 pF Typ.
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage V
DSS
–60 V
Gate to Source Voltage* V
GSS (AC)
+20 V
Gate to Source Voltage V
GSS (DC)
–20, 0 V
Drain Current (DC) I
D (DC)
+20 A
Drain Current (pulse)** I
D (pulse)
+80 A
Total Power Dissipation (T
C
= 25 °C) P
T
35 W
Total Power Dissipation (T
A
= 25 °C) P
T
2.0 W
Channel Temperature T
ch
150 °C
Storage Temperature T
stg
–55 to +150 °C
* f = 20 kHz, Duty Cycle
d
10% (+Side)
** PW
d
10
P
s, Duty Cycle
d
1%
THERMAL RESISTANCE
Channel to Case R
th (ch-C)
3.57 °C/W
Channel to Ambient R
th (ch-A)
62.5 °C/W
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
PACKAGE DIMENSIONS
(in millimeter)
1. Gate
2. Drain
3. Source
10.0±0.3
3.2±0.2
2.7±0.2
1.3±0.20.7±0.1
2.54
2.54
1.5±0.2
123
4±0.2
13.5 MIN. 12.0±0.2
15.0±0.3
3±0.1
4.5±0.2
2.5±0.1
0.65±0.1
ISOLATED TO-220 (MP-45F)
Body
Diode
Source
Drain
Gate
Gate Protection
Diode
–
–
–