The information in this document is subject to change without notice.
©
1998
MOS FIELD EFFECT TRANSISTOR
2SJ492
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D11264EJ1V0DS00 (1st edition)
Date Published December 1998 NS CP(K)
Printed in Japan
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for DC/DC converters and motor/lamp driver
circuits.
FEATURES
• Low on-state resistance
R
DS(on)1
= 100 mΩ (MAX.) (V
GS
= –10 V, I
D
= –10 A)
R
DS(on)2
= 185 mΩ (MAX.) (V
GS
= –4 V, I
D
= –10 A)
• Low C
iss
: C
iss
= 1210 pF (TYP.)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V) V
DSS
–60 V
Gate to Source Voltage (V
DS
= 0 V) V
GSS(AC)
# 20
V
Gate to Source Voltage (V
DS
= 0 V)
Note1
V
GSS(DC)
–20, 0 V
Drain Current (DC) I
D(DC)
# 20
A
Drain Current (pulse)
Note2
I
D(pulse)
# 80
A
Total Power Dissipation (T
A
= 25°C) P
T
1.5 W
Total Power Dissipation (T
C
= 25°C) P
T
70 W
Channel Temperature T
ch
150 °C
Storage Temperature T
stg
–55 to +150 °C
Single Avalanche Current
Note3
I
AS
–20 A
Single Avalanche Energy
Note3
E
AS
40 mJ
Notes 1.
f = 20
kHz, Duty Cycle ≤ 10% (+Side)
2.
PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
3.
Starting T
ch
= 25
°C, R
A
= 25
Ω, V
GS
= –20
V
→
0
THERMAL RESISTANCE
Channel to Case R
th(ch-C)
1.79 °C/W
Channel to Ambient R
th(ch-A)
83.3 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ492 TO-220AB
2SJ492-S TO-262
2SJ492-ZJ TO-263
