Elektronische Bauelemente
2SD601A
0.1A , 60V
NPN Plastic-Encapsulate Transistor
04-Mar-2011 Rev. B Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
High forward current transfer ratio h
FE
Low collector to emitter saturation voltage V
CE(sat)
CLASSIFICATION OF h
FE
Product-Rank
2SD601A-Q
2SD601A-R
2SD601A-S
Range 160~260 210~340 290~460
Marking Code
ZQ ZR ZS
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-23 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
60 V
Collector to Emitter Voltage V
CEO
50 V
Emitter to Base Voltage V
EBO
7 V
Collector Current - Continuous I
C
100 mA
Collector Power Dissipation P
C
200 mW
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage V
(BR)CBO
60 - - V I
C
=10µA, I
E
=0
Collector to Emitter Breakdown Voltage
V
(BR)CEO
50 - - V I
C
=2mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
7 - - V I
E
=10µA, I
C
=0
Collector Cut-Off Current I
CBO
- - 0.1 µA V
CB
=20V, I
E
=0
Emitter Cut-Off Current I
EBO
- - 100 µA V
EB
=10V, I
C
=0
Collector to Emitter Saturation Voltage V
CE(sat)
- - 0.3 V I
C
=100mA, I
B
=10mA
h
FE (1)
160 - 460 V
CE
=10V, I
C
=2mA
DC Current Gain
h
FE (2)
90 - -
V
CE
=2V, I
C
=100mA
Transition Frequency f
T
- 150 - MHz
V
CE
=10V, I
C
=2mA, f=200MHz
Collector Output Capacitance C
ob
- 3.5 - pF V
CB
=10V, I
E
=0, f=1MHz
SOT-23
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
REF.
Min. Max.
REF.
Min. Max.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
