2SD596
0.7A , 30V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
15-Jul-2011 Rev. A
Page 1 of 3
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Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current gain
Complementary to 2SB624
MARKING
DV4
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-23 3K 7 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
30 V
Collector to Emitter Voltage V
CEO
25 V
Emitter to Base Voltage V
EBO
5 V
Collector Current - Continuous I
C
700 mA
Collector Power Dissipation P
C
200 mW
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Condition
Collector to Base Breakdown Voltage V
(BR)CBO
30 - - V I
C
=100µA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
25 - - V I
C
=1mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
5 - - V I
E
=100µA, I
C
=0
Collector Cut-Off Current I
CBO
- - 0.1 µA V
CB
=30V, I
E
=0
Emitter Cut-Off Current I
EBO
- - 0.1 µA V
EB
=5V, I
C
=0
DC Current Gain
1
h
FE (1)
200 - 320
V
CE
=1V, I
C
=100mA
h
FE (2)
50 - - V
CE
=1V, I
C
=700mA
Collector to Emitter Saturation Voltage
V
CE(sat)
- - 0.6 V I
C
=700mA, I
B
=70mA
Base to Emitter Saturation Voltage
V
BE
0.6 - 0.7 V V
CE
=6V, I
C
=10mA
Transition Frequency f
T
170 - - MHz
V
CE
=6V, I
C
=10mA
Collector output capacitance
C
ob
-
12 -
pF V
CB
=6V, I
E
=0, f=10MH
Z
Note:
1. Pulse width≦350µs, Duty Cycle≦2%.
SOT-23
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
REF.
REF.
Min. Max.
Min. Max.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50