The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998©
Document No. D14863EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD560
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD560 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This transistor is
ideal for direct driving from the IC output of devices such as pulse
motor drivers and relay drivers, and PC terminals.
FEATURES
• C-to-E reverse diode inserted
• Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
150 V
Collector to emitter voltage V
CEO
100 V
Emitter to base voltage V
EBO
7.0 V
Collector current (DC) I
C(DC)
±5.0
A
Collector current (pulse) I
C(pulse)
PW ≤ 10 ms,
duty cycle ≤ 50%
±8.0
A
Base current (DC) I
B(DC)
0.5 A
T
C
= 25°C
30 W
Total power dissipation P
T
T
A
= 25°C
1.5 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
ORDERING INFORMATION
Ordering Name Package
2SD560 TO-220AB
(TO-220AB)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
