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1998©
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
2002
FEATURES
• Ideal for audio amplifier drivers with 30 W to 50 W output
• High voltage
• Available for small mount spaces due to small and thin package
• Easy to be attached to radiators
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol 2SB548/
2SD414
2SB549/
2SD415
Unit
Collector to base voltage V
CBO
−100/120
V
Collector to emitter voltage V
CEO
−80/80 −100/100
V
Emitter to base voltage V
EBO
−5.0/5.0
V
Collector current I
C(DC)
−0.8/0.8
A
Collector current I
C(pulse)
*
−1.5/1.5
A
Total power dissipation
P
T
(Ta = 25°C)
1.0 W
Total power dissipation
P
T
(Tc = 25°C)
10 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25°
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
CBO
V
CB
= −80/80 V, I
E
= 0 −1.0/1.0
µ
A
Emitter cutoff current I
EBO
V
EB
= −3.0/3.0 V, I
C
= 0 −1.0/1.0
µ
A
DC current gain h
FE1
V
CE
= −5.0/5.0 V, I
C
= −2.0/2.0 mA*
20
DC current gain h
FE2
V
CE
= −5.0/5.0 V, I
C
= −200/200 mA*
40 90 320
Collector saturation voltage V
CE(sat)
I
C
= −500/500 mA, I
B
= −50/50 mA* −0.4/0.3 −2.0/2.0
V
Base saturation voltage V
BE(sat)
I
C
= −500/500 mA, I
B
= −50/50 mA* −0.9/0.9 −1.5/1.5
V
Gain bandwidth product f
T
V
CE
= −5.0/5.0 V, I
C
= −100/100 mA
70/45 MHz
Collector capacitance C
ob
V
CB
= −10/10 V, I
E
= 0, f = 1.0 MHz
25/15 pF
* Pulse test PW ≤ 350
µ
s, duty cycle ≤ 2%
h
FE2
CLASSIFICATION
Marking S R Q P
h
FE2
40 to 80 60 to 120 100 to 200 160 to 320