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1998©
Document No. D16140EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD2217
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2217 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This
transistor is ideal for direct driving from the IC out to drivers such as
pulse motor drivers and relay drivers in OA and FA equipment.
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
300 V
Collector to emitter voltage V
CEO
300 V
Emitter to base voltage V
EBO
7V
Collector current I
C(DC)
300 mA
Collector current I
C(pulse)
* 600 mA
Base current I
B(DC)
30 mA
Total power dissipation
P
T
(Tc = 25°C)
25 W
Total power dissipation
P
T
(Ta = 25°C)
2.0 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base (B)
2. Collector (C)
3. Emitter (E)
