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1998©
Document No. D15606EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2164 is a single power transistor developed especially
for high h
FE
. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its h
FE
is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin insulated
package, thus contributing to high-density mounting and mounting
cost reduction.
FEATURES
• High h
FE
and low V
CE(sat)
:
h
FE
≅ 1,300 TYP. (V
CE
= 5.0 V, I
C
= 0.5 A)
V
CE(SAT)
≅ 0.3 V TYP. (I
C
= 2.0 A, I
B
= 20 mA)
• Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
60 V
Collector to emitter voltage V
CEO
60 V
Emitter to base voltage V
EBO
7.0 V
Collector current (DC) I
C(DC)
3.0 A
Collector current (pulse) I
C(pulse)
5.0
Note
A
Base current (DC) I
B(DC)
0.5 A
Total power dissipation
P
T
(T
C
= 25°C)
20 W
Total power dissipation
P
T
(T
A
= 25°C)
2.0 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
Note PW ≤ 300
µ
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
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