Elektronische Bauelemente
2SD2153
2A , 30V
NPN Plastic Encapsulated Transistor
20-Nov-2013 Rev. A Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package
General Purpose Application
CLASSIFICATION OF h
FE(1)
Product-Rank
2SD2153-U 2SD2153-V
Range 560~1200 820~1800
MARKING
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector-Base Voltage V
CBO
30 V
Collector-Emitter Voltage V
CEO
25 V
Emitter-Base Voltage V
EBO
6 V
Collector Current-Continuous I
C
2 A
Pulsed Collector Current
1
I
CP
3 A
Collector Power Dissipation P
C
0.5 W
Maximum Junction to Ambient R
θJA
250 °C / W
Junction & Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max.
Unit
Test conditions
Collector-Base Breakdown Voltage V
(BR)CBO
30 - - V I
C
=50µA, I
E
=0
Collector-Emitter Breakdown Voltage V
(BR)CEO
25 - - V I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage V
(BR)EBO
6 - - V I
E
=50µA, I
C
=0
Collector Cut-Off Current I
CBO
-
- 0.5 µA
V
CB
=20V, I
E
=0
Emitter Cut-Off Current I
EBO
- - 0.5 µA
V
EB
=5V, I
C
=0
DC Current Gain
1
h
FE
560 - 1800 V
CE
=6V, I
C
=500mA
Collector-Emitter Saturation voltage V
CE(sat)
- - 0.5 V I
C
=1A, I
B
=20mA
Transition Frequency f
T
- 110 - MHz
V
CE
=10V,I
C
=10mA,f=100MHz
Collector Output Capacitance C
OB
- 22 - pF
V
CB
=10V, I
E
=0, f=1MHz
Note:
1. Single pulse, PW=10mS
Package MPQ Leader Size
SOT-89 1K 7 inch
SOT-89
REF.
REF.
D 2.25 2.60 K 0.32 0.52
E 1.50 1.85 L 0.35 0.44
F 0.89 1.20
DN