Elektronische Bauelemente
2SD2150
3 A, 40 V
NPN Plastic Encapsulated Transistor
6-Nov-2009 Rev. B Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Excellent Current-to-Gain Characteristics
Low Collector Saturation Voltage,
V
CE(SAT)
=0.5V(Max.) for I
C
/ I
B
=2A/0.1A
MARKING
CFR
CFS
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER SYMBOL
RATINGS UNIT
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V
CEO
20 V
Emitter-Base Voltage V
EBO
6 V
Collector Current-Continuous I
C
3 A
Collector Power Dissipation P
C
500 mW
Junction & Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER SYMBOL
MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector-base breakdown voltage V
(BR)CBO
40 - - V I
C
=50µA, I
E
=0
Collector-emitter breakdown voltage V
(BR)CEO
20 - - V I
C
=1mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
6 - - V I
E
=50µA, I
C
=0
Collector cut-off current I
CBO
-
- 0.1 µA V
CB
=30V, I
E
=0
Emitter cut-off current I
EBO
- - 0.1 µA V
EB
=5 V, I
C
=0
DC current gain h
FE
* 180 - 560 V
CE
=2V, I
C
= 100mA
Collector-emitter saturation voltage V
CE(sat)
* - - 0.5 V I
C
=2A, I
B
= 100mA
Transition frequency f
T
* - 290 - MHz V
CE
=2V, I
C
=-500mA, f=100MHz
Collector Output Capacitance C
OB
- 25 - pF V
CB
=10V, I
E
=0, f=1MHz
*Pulse test: t
P
≦300µS, δ≦0.02
CLASSIFICATION OF hFE
Rank R
S
Range
180-390 270-560
Marking
CFR CFS
REF.
REF.
D 2.30 2.60 K 0.32 0.52
E 1.50 1.70 L 0.35 0.44
F 0.89 1.20
SOT-89
