Elektronische Bauelemente
2SD2142
0.3A , 40V
NPN Plastic-Encapsulate Transistor
04-Mar-2011 Rev. B
Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Darlington connection for a high h
FE
.
High input impedance.
MARKING
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-23 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
40 V
Collector to Emitter Voltage V
CEO
32 V
Emitter to Base Voltage V
EBO
12 V
Collector Current - Continuous I
C
300 mA
Collector Power Dissipation P
C
200 mW
Thermal Resistance From Junction to Ambient R
θJA
625 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage V
(BR)CBO
40 - - V I
C
=100µA, I
E
=0
Collector to Emitter Breakdown Voltage
V
(BR)CEO
32 - - V I
C
=10mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
12 - - V I
E
=100µA, I
C
=0
Collector Cut-Off Current I
CBO
- - 0.1 µA V
CB
=30V, I
E
=0
Emitter Cut-Off Current I
EBO
- - 0.1 µA V
EB
=12V, I
C
=0
DC Current Gain h
FE
5000
- - V
CE
=3V, I
C
=100mA
Collector to Emitter Saturation Voltage
V
CE(sat)
- - 1.4 V I
C
=200mA, I
B
=0.2mA
Transition Frequency f
T
- 200 - MHz
V
CE
=5V, I
C
=10mA, f=100MHz
Collector Output Capacitance C
ob
- 2.5 - pF V
CB
=10V, I
E
=0, f=1MHz
SOT-23
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
REF.
Min. Max.
REF.
Min. Max.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
