Any changing of specification will not be informed individual
2SD2142
NPN Plastic
Plastic-Encapsulate Transistor
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
SOT-23
K
J
C
H
L
A
B
S
GV
3
1
2
D
Top View
http://www.SeCoSGmbH.com
Elektronische Bauelemente
MAXIMUM RATINGS* T
A
=25 unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
40
V
CEO
Collector-Emitter Voltage
32
V
EBO
Emitter-Base Voltage
12
I
C
Collector Current -Continuous
mA
P
C
Collector Dissipation
200
mW
V
V
V
300
T
J
, T
stg
Junction and Storage Temperature
-55~150
C
C
o
o
01-Jun-2007 Rev. A
Page 1 of 2
FEATURES
z Darlington connection for a high h
FE
z High input impedance
MARKING:R1M
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
=100μA,I
E
=0 40 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=10mA,I
B
=0 32 V
Emitter-base breakdow n voltage
V
(BR)EBO
I
E
=100μA,I
C
=0 12 V
Collector cut-off current
I
CBO
V
CB
=30V,I
E
=0 0.1 μA
Emitter cut-off current
I
EBO
V
EB
=12V,I
C
=0 0.1 μA
DC current gain
h
FE
V
CE
=3V,I
C
=100mA 5000
Collector-emitter saturation voltage
V
CE(sat)
I
C
=200mA,I
B
=0.2mA 1.4 V
Transition frequency
f
T
V
CE
=5V,I
C
=10mA,f=100MHz 200 MHz
Collector output capacitan ce
C
ob
V
CB
=10V,I
E
=0,f=1MHz 2.5 pF
1.BASE
2.EMITTER
3.COLLECTOR
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free