Elektronische Bauelemente
2SD2136
3A , 60V
NPN Plastic Encapsulated Transistor
03-Dec-2013 Rev. A Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low frequency power amplifier
Low Collector-Emitter Saturation Voltage VCE(sat)
High Forward Current Transfer Ratio hFE Which has
Satisfactory Linearity.
CLASSIFICATION OF h
FE (1)
Product-Rank
2SD2136-P 2SD2136-Q 2SD2136-R
Range 40~90 70~150 120~250
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
60 V
Collector to Emitter Voltage V
CEO
60 V
Emitter to Base Voltage V
EBO
6 V
Collector Current - Continuous I
C
3 A
Collector Power Dissipation P
C
1.25 W
Thermal Resistance From Junction To Ambient R
θJA
100 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage V
(BR)CBO
60 - - V I
C
=0.1mA, I
E
=0
Collector to Emitter Breakdown Voltage
1
V
(BR)CEO
60 - - V I
C
=30mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
6 - - V I
E
=0.1mA, I
C
=0
Collector Cut – Off Current I
CBO
- - 200 µA V
CB
=60V, I
E
=0
Collector Cut – Off Current I
CEO
- - 300 µA V
CE
=60V, I
B
=0
Emitter Cut – Off Current I
EBO
- - 1 mA V
EB
=6V, I
C
=0
h
FE (1)
40 - 250 V
CE
=4V, I
C
=1A
DC Current Gain
1
h
FE (2)
10 - -
V
CE
=4V, I
C
=3A
Collector to Emitter Saturation Voltage
1
V
CE(sat)
- - 1.2 V I
C
=3A, I
B
=375mA
Collector Output Capacitance
1
V
BE
- - 1.8 V V
CE
=4V, I
C
=3A
Transition Frequency f
T
- 30 - MHz
V
CE
=5V, I
C
=100mA, f=10MHz
Note:
1. Pulse test: pulse width ≤300µs, duty cycle≤ 2.0%.
2
22
2Collector
3
33
3Base
TO-126
REF.
REF.