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2SD1819A_11

2SD1819A_11首页预览图
型号: 2SD1819A_11
PDF文件:
  • 2SD1819A_11 PDF文件
  • 2SD1819A_11 PDF在线浏览
功能描述: NPN Plastic-Encapsulate Transistor
PDF文件大小: 387.59 Kbytes
PDF页数: 共2页
制造商: SECOS[SeCoS Halbleitertechnologie GmbH]
制造商LOGO: SECOS[SeCoS Halbleitertechnologie GmbH] LOGO
制造商网址: http://www.secosgmbh.com
捡单宝2SD1819A_11
PDF页面索引
120%
Elektronische Bauelemente
2SD1819A
0.1A , 60V
NPN Plastic-Encapsulate Transistor
24
24-Feb-2011 Rev. B Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
1
Base
2
Emitter
Collector
3
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain.
Low collector to emitter saturation voltage V
CE(sat)
.
Complementary to 2SB1218A
APPLICATION
General purpose amplification.
CLA
SSIFICATION OF h
FE
Product-Rank 2SD1819A-Q 2SD1819A-R 2SD1819A-S
Range 160~260 210~340 290~460
Marking ZQ ZR ZS
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-323 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Sym
bol Rating Unit
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
50 V
Emitter-Base Voltage V
EBO
7 V
Collector Current I
C
100 mA
Collector Power Dissipation P
C
150 mW
Thermal Resistance From Junction to Ambient R
θJA
833 °C / W
Junction & Storage temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-Base Breakdown Voltage V
(BR)CBO
60 - - V I
C
=10µA, I
E
=0
Collector-Emitter Breakdown Voltage V
(BR)CEO
50 - - V I
C
=2mA, I
B
=0
Emitter-Base Breakdown Voltage V
(BR)EBO
7 - - V I
E
=10µA, I
C
=0
Collector Cut-Off Current I
CBO
- - 0.1 µA V
CB
=20V, I
E
=0
Base Cut-Off Current I
CEO
- - 100 µA V
CE
=10V, I
B
=0
Emitter Cut-off Current I
EBO
- - 0.1 µA V
EB
=7V, I
C
=0
h
FE (1)
160 - 460 V
CE
=10V, I
C
=2mA
DC Current Gain
h
FE (2)
90 - -
V
CE
=2V, I
C
=100mA
Collector-Emitter Saturation Voltage V
CE(sat)
- - 0.3 V I
C
=100mA, I
B
=10mA
Transition Frequency f
T
- 150 - MHz V
CE
=10V, I
C
=2mA, f=200MHz
Collector Output Capacitance C
ob
- 3.5 - pF V
CB
=10V, I
E
=0, f=1MHz
SOT-323
Millimeter Mil
limeter
REF.
Min. Max.
REF.
Min. Max.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
D 0.80 1.10 K - -
E 1.20 1.40 L 0.650 TYP.
F 0.20 0.40
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