2SD1760
3A , 60V
NPN Epitaxial Planar Silicon Transistor
Elektronische Bauelemente
28-Mar-2011 Rev. A Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Base
Emitte
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low V
CE(sat)
. V
CE(sat)
= 0.5V(Typ.) (I
C
/I
B
= 2A / 0.2A)
Complements the 2SB1184
CLASSIFICATION OF h
FE
Product-Rank 2SD1760-P 2SD1760-Q 2SD1760-R
Range 82~180 120~270 180~390
PACKAGE INFORMATION
Package MPQ Leader Size
TO-252 2.5K 13’ inch
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
60 V
Collector to Emitter Voltage V
CEO
50 V
Emitter to Base Voltage V
EBO
5 V
Collector Current -Continuous I
C
3
A
Collector Power Dissipation P
C
1.5 W
Junction Temperature T
J
150 ℃
Storage Temperature T
STG
-55 ~ 150 ℃
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage V
(BR)CBO
60 - - V I
C
=50μA, I
E
=0
Collector-emitter breakdown voltage V
(BR)CEO
50 - - V I
C
=1mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
5 - - V I
E
=50μA, I
C
=0
Collector cut-off current I
CBO
- - 1 μA V
CB
=40V, I
E
=0
Emitter cut-off current I
EBO
- - 1 μA V
EB
=4V, I
C
=0
DC current gain h
FE
82 - 390 V
CE
=3V, I
C
=500mA
Collector-emitter saturation voltage V
CE(sat)
- - 1 V I
C
=2A, I
B
=200mA
Transition frequency f
T
- 90 - MHz V
CE
=5V, I
C
=500mA, f=30MHz
Collector Output Capacitance C
OB
- 40 - pF V
CB
=10V, I
E
=0, f=1MHz
A
C
D
N
O
P
G E
FHK
J
M
B
D-Pack (TO-252)
REF.
Millimete
REF.
Millimete
Min. Max. Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
