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1998©
Document No. D16189EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD1481
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
FEATURES
• On-chip C-to-B Zener diode for surge voltage absorption
• Low collector saturation voltage: V
CE(SAT)
= 1.5 V MAX. (at 1 A)
• Ideal for use in a direct drive from IC to the devices such as OA
and FA equipment and motor solenoid relay printer head drivers
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
60 ±10
V
Collector to emitter voltage V
CEO
60 ±10
V
Emitter to base voltage V
EBO
7.0 V
Collector current I
C(DC)
2.0 A
Collector current I
C(pulse)
*4.0A
Base current I
B(DC)
0.2 A
Total power dissipation
P
T
(Tc = 25°C)
15 W
Total power dissipation
P
T
(Ta = 25°C)
1.5 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
* PW ≤ 300
µ
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
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