2SD1468
1A , 30V
NPN Plastic-Encapsulated Transistor
Elektronische Bauelemente
26-Mar-2012 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Saturation Voltage
Ideal for Low Voltage, High Current Dribes
High DC Current Gain and High Current
CLASSIFICATION OF h
FE
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
30 V
Collector to Emitter Voltage V
CEO
15 V
Emitter to Base Voltage V
EBO
5 V
Collector Current - Continuous I
C
1 A
Collector Power Dissipation P
C
625 W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Condition
Collector to Base Breakdown Voltage V
(BR)CBO
30 - - V I
C
=50µA, I
E
=0
Collector to Emitter Breakdown Voltage
V
(BR)CEO
15 - - V I
C
=1mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
5 - - V I
E
=50µA, I
C
=0
Collector Cut – Off Current I
CBO
- - 0.5 µA V
CB
=20V, I
E
=0
Emitter Cut – Off Current I
EBO
- - 0.5 µA V
EB
=4V, I
C
=0
DC Current Gain h
FE
120 - 560 V
CE
=3V, I
C
=100mA
Collector to Emitter Saturation Voltage V
CE(sat)
- - 0.4 V I
C
=500mA, I
B
=50mA
Transition Frequency f
T
50 - - MHz
V
CE
=5V, I
C
=50mA, f=100MHz
Collector Output Capacitance C
ob
- - 30 pF V
CB
=10V, I
E
=0, f=1MHz
Product-Rank
2SD1468-Q
2SD1468-R 2SD1468-S
Range 120~270 180~390 270~560
Base
Emitter
Collector
2
TO-92
2
22
2 Collector
3
33
3 Base
REF.
