2SD1271A
7A , 150V
NPN Plastic-Encapsulated Transistor
Elektronische Bauelemente
08-Nov-2012 Rev. A Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
Low Collector to Emitter Saturation Voltage V
CE(sat)
Satisfactory Linearity of Forward Current Transfer Ratio h
FE
Large Collector Current
CLASSIFICATION OF h
FE
Product-Rank 2SD1271A-R
2SD1271A-Q
2SD1271A-P
Range 60~120 90~180 130~260
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
150 V
Collector to Emitter Voltage V
CEO
100 V
Emitter to Base Voltage V
EBO
7 V
Collector Current - Continuous I
C
7 A
Collector Power Dissipation P
C
2 W
Thermal Resistance From Junction To Ambient R
θJA
62.5 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Condition
Collector to Base Breakdown Voltage V
(BR)CBO
150 - - V I
C
=0.1mA, I
E
=0
Collector to Emitter Breakdown Voltage
V
(BR)CEO
100 - - V I
C
=10mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
7 - - V I
E
=0.1mA, I
C
=0
Collector Cut – Off Current I
CBO
- - 10 µA V
CB
=100V, I
E
=0
Emitter Cut – Off Current I
EBO
- - 50 µA V
EB
=5V, I
C
=0
DC Current Gain h
FE
45 - -
V
CE
=2V, I
C
=0.1A
60 - 260 V
CE
=2V, I
C
=3A
Collector-emitter saturation voltage V
CE(sat)
- - 0.5 V I
C
=5A, I
B
=250mA
Base to Emitter Saturation Voltage V
BE(sat)
- - 1.5 V I
C
=5A, I
B
=250mA
Transition Frequency f
T
- 30 - MHz
V
CE
=10V, I
C
=500mA, f =10MHz
ITO-220J
REF.
REF.
