2SD1005
1A , 100V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
10-Nov-2011 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package
High Breakdown Voltage
Excellent DC Current Gain Linearity
CLASSIFICATION OF h
FE(1)
Product-Rank
2SD1005-W 2SD1005-V 2SD1005-U
Range 90~180 135~270 200~400
Marking
BW BV BU
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-89 1K 7 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector-Base Voltage V
CBO
100 V
Collector-Emitter Voltage V
CEO
80 V
Emitter-Base Voltage V
EBO
5 V
Collector Current-Continuous I
C
1 A
Collector Power Dissipation P
C
500 mW
Maximum Junction to Ambient R
θJA
250 °C / W
Junction & Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max.
Unit
Test conditions
Collector-Base Breakdown Voltage V
(BR)CBO
100 - - V I
C
=0.1mA, I
E
=0
Collector-Emitter Breakdown Voltage V
(BR)CEO
80 - - V I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage V
(BR)EBO
5 - - V I
E
=0.1mA, I
C
=0
Collector Cut-Off Current I
CBO
-
- 0.1 µA V
CB
=100V, I
E
=0
Emitter Cut-Off Current I
EBO
- - 0.1 µA V
EB
=5V, I
C
=0
DC Current Gain h
FE
*
90 - 400
V
CE
=2V, I
C
=100mA
25 - - V
CE
=2V, I
C
=500mA
Collector-Emitter Saturation voltage V
CE(sat)
* - - 0.5 V I
C
=500mA, I
B
=50mA
Base-emitter saturation voltage V
BE(sat)
* - - 1.5 V I
C
=500mA, I
B
=50mA
Base-emitter voltage V
BE
* 0.6 - 0.7 V V
CE
=10V,I
C
=10mA
Transition Frequency f
T
- 160 - MHz
V
CE
=5V,I
C
=10mA
Collector Output Capacitance C
OB
- 12 - pF V
CB
=10V, I
E
=0, f=1MHz
*Pulse test
SOT-89
REF.
REF.
D 2.25
2.60 K 0.32 0.52
E 1.50
1.85 L 0.35 0.44
F 0.89
1.20