Rev.2.00 Aug 10, 2005 page 1 of 14
2SC5702
Silicon NPN Epitaxial
High Frequency Amplifier / Oscillator
REJ03G0752-0200
(Previous ADE-208-1414)
Rev.2.00
Aug.10.2005
Features
• High gain bandwidth product
f
T
= 8 GHz typ.
• High power gain and low noise figure ;
PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MH z
Outline
1. Emitter
2. Base
3. Collecto
1
3
2
RENESAS Package code: PUSF0003ZA-A
(Package name: MFPAK
R
)
Note: Marking is “ZS-”.
*MFPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
15 V
Collector to emitter voltage V
CEO
6 V
Emitter to base voltage V
EBO
1.5 V
Collector current I
C
50 mA
Collector power dissipation Pc 80 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
