QW-JTR07
Page 1
REV: A
Symbol
Parameter
Conditions Min
Max
Unit
Electrical Characteristics (at TA=25°C unless otherwise noted)
Collector-Base breakdown voltage
0.1
IC =50μA , IE=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
IC =1mA , IB=0
IE =50μA , IC=0
VCB=60V , IE=0
VEB=7V , IC=0
VCE=6V , IC=1mA
IC=50mA , IB=5mA
VCE=12V , IC=2mA
f=100MHZ
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
50
60
7
0.1
120
0.4
V
V
V
µA
µA
V
MHZ
Output capacitance
Cob
VCB=12V , IE=0
f=1MHZ
pF
3.5
560
Typ
180
Comchip
S M D D i o d e S p e c i a l i s t
General Purpose Transistor
Features
-Low Cob.
Symbol
Parameter Value
Unit
Absolute Maximum Ratings (at TA=25°C )
Collector-Base voltage
150
Collector-Emitter voltage
Emitter-Base voltage
Collector dissipation
Collector current- continuous
Junction temperature
VCBO
VCEO
VEBO
IC
PC
TJ
50
60
7
100
150
V
V
V
mA
µA
µA
Storage temperature
TSTG -55 ~ +150
µA
2SC5658-HF (NPN)
RoHS Device
R
Rank
Q
S
Range
120~270
180~390
270~560
Dimensions in inches and (millimeter)
SOT-723
0.049(1.25)
0.045(1.15)
0.011(0.270)
0.007(0.170)
0.015(0.370)
0.011(0.270)
0.033(0.850)
0.030(0.750)
0.006(0.15)
Max.
0.006(0.15)
Max.
0.002(0.050)
Max.
0.020(0.50)
Max.
1
2
3
Mechanical data
-Case: SOT-723, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
Circuit diagram
3
1 2
-1.BASE
-2.EMITTER
-3.COLLECTOR
0.031(0.800)
Typ.
0.049(1.250)
0.045(1.150)
Halogen Free
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.