Rev.3.00, Feb.21.2005, page 1 of 6
2SC5624
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier
REJ03G0129-0300
Rev.3.00
Feb.21.2005
Features
• High gain bandwidth product
f
T
= 28 GHz typ.
• High power gain and low noise figure;
PG = 18 dB typ., NF = 1.2 dB typ. at f = 1.8 GHz
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
1. Emitter
2. Collecto
3. Emitter
4. Base
1
4
3
2
1
4
3
2
Note: Marking is “VH-”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
10 V
Collector to emitter voltage V
CEO
3.5 V
Emitter to base voltage V
EBO
0.8 V
Collector current I
C
35 mA
Collector power dissipation Pc 100 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: Value on PCB (40 x 40 x 1.0mm)
