PRELIMINARY DATA SHEET
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14658EJ2V0DS00 (2nd edition)
Date Published April 2000 NS CP(K)
Printed in Japan
NPN SILICON RF TRANSISTOR
2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE · HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
1999, 2000
The mark
•
••
•
shows major revised poi nts.
FEATURES
• Suitable for high-frequency oscillation
•f
T
= 25 GHz technology adopted
• 3-pin ultra super minimold
ORDERING INFORMATION
Part Number Quantity Supplyi ng Form
2SC5606 50 pcs (Non reel) • 8 mm wide embos sed taping
2SC5606-T1 3 kpcs / reel • Pin 3 (col l ec tor) face the perforati on side of t he tape
Remark
To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25 °
°°
°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
15 V
Collector to Emitter Voltage V
CEO
3.3 V
Emitter to Base Voltage V
EBO
1.5 V
Collector Current I
C
35 mA
Total Power Dissipation
P
tot
Note
115 mW
Junction Temperature T
j
150
°
C
Storage Temperat ure T
stg
−
65 to +150
°
C
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.