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DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE · HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
Document No. PU10781EJ01V0DS (1st edition)
(Previous No. P14658EJ3V0DS00)
Date Published August 2009 NS
Printed in Japan
1999, 2009
FEATURES
• Suitable for high-frequency oscillation
• f
T = 25 GHz technology adopted
• 3-pin ultra super minimold (19, 1608 PKG) package
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
2SC5606 2SC5606-A 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5606-T1 2SC5606-T1-A
3-pin ultra super minimold
(19, 1608 PKG) (Pb-Free)
3 kpcs/reel • Pin 3 (collector) face the perforation side of
the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 15 V
Collector to Emitter Voltage VCEO 3.3 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation Ptot
Note
115 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy substrate
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